Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

J. T. Hsu; C. S. Huang; W. Y. Yeh; J. D. Tsay; Y. D. Quo; C. C. Chuo; C. Y. Lin; C. C. Sun; S. M. Pan

doi:10.1117/12.565339

Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

J. T. Hsu, C. S. Huang, W. Y. Yeh, J. D. Tsay, Y. D. Quo, C. C. Chuo, C. Y. Lin, C. C. Sun, S. M. Pan

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

Original language	English
Article number	28
Pages (from-to)	207-213
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5530
DOIs	https://doi.org/10.1117/12.565339
State	Published - 2004
Event	Fourth International Conference on Solid State Lighting - Denver, CO, United States Duration: 3 Aug 2004 → 6 Aug 2004

Keywords

Compound semiconductor
GaN
GaN substrate
HVPE
LED
Solid state lighting

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@article{0278f496cc1a4d2b9333306df7cccc69,

title = "Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips",

abstract = "In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.",

keywords = "Compound semiconductor, GaN, GaN substrate, HVPE, LED, Solid state lighting",

author = "Hsu, {J. T.} and Huang, {C. S.} and Yeh, {W. Y.} and Tsay, {J. D.} and Quo, {Y. D.} and Chuo, {C. C.} and Lin, {C. Y.} and Sun, {C. C.} and Pan, {S. M.}",

year = "2004",

doi = "10.1117/12.565339",

language = "???core.languages.en_GB???",

volume = "5530",

pages = "207--213",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Fourth International Conference on Solid State Lighting ; Conference date: 03-08-2004 Through 06-08-2004",

}

TY - JOUR

T1 - Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

AU - Hsu, J. T.

AU - Huang, C. S.

AU - Yeh, W. Y.

AU - Tsay, J. D.

AU - Quo, Y. D.

AU - Chuo, C. C.

AU - Lin, C. Y.

AU - Sun, C. C.

AU - Pan, S. M.

PY - 2004

Y1 - 2004

N2 - In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

AB - In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

KW - Compound semiconductor

KW - GaN

KW - GaN substrate

KW - HVPE

KW - LED

KW - Solid state lighting

UR - http://www.scopus.com/inward/record.url?scp=15744403568&partnerID=8YFLogxK

U2 - 10.1117/12.565339

DO - 10.1117/12.565339

M3 - 會議論文

AN - SCOPUS:15744403568

SN - 0277-786X

VL - 5530

SP - 207

EP - 213

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 28

T2 - Fourth International Conference on Solid State Lighting

Y2 - 3 August 2004 through 6 August 2004

ER -

Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

Abstract

Keywords

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