Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

J. T. Hsu, C. S. Huang, W. Y. Yeh, J. D. Tsay, Y. D. Quo, C. C. Chuo, C. Y. Lin, C. C. Sun, S. M. Pan

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

Original languageEnglish
Article number28
Pages (from-to)207-213
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2004
EventFourth International Conference on Solid State Lighting - Denver, CO, United States
Duration: 3 Aug 20046 Aug 2004


  • Compound semiconductor
  • GaN
  • GaN substrate
  • HVPE
  • LED
  • Solid state lighting


Dive into the research topics of 'Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips'. Together they form a unique fingerprint.

Cite this