TY - JOUR
T1 - Behavior of arsenic precipitation in low-temperature grown III-V arsenides
AU - Chang, M. N.
AU - Hsieh, K. C.
AU - Nee, T. E.
AU - Chuo, C. C.
AU - Chyi, J. I.
N1 - Funding Information:
The authors would like to acknowledge the support of the Instrument Center at College of Engineering and the Optical Science Center, National Central University. The work was partly supported by the grant under contract NSC 87-2218-E-008-025.
PY - 1999/5
Y1 - 1999/5
N2 - A general point defect model is proposed to explain the behavior of arsenic precipitation in low-temperature grown III-V arsenides. From transmission electron microscopic studies on p, i, and n-doped LT-GaAs, the density of As precipitates was found to be the lowest in the n-type material and the highest in the p-type one. In an n-i-p structure, a wider depletion zone of As precipitate exists in the n-i interface than the i-p interface. It is also found that for a heterostructure containing materials with different bond strengths, As precipitates tend to condense in the material with lower bond strength. This is due to the higher vacancy concentration in the material with lower bond strength. These results imply that materials with higher bond strength, such as AlGaAs and AlAs, are As diffusion barriers in heterostructures. Line defects are also shown to facilitate As precipitation because they provide extra vacancies.
AB - A general point defect model is proposed to explain the behavior of arsenic precipitation in low-temperature grown III-V arsenides. From transmission electron microscopic studies on p, i, and n-doped LT-GaAs, the density of As precipitates was found to be the lowest in the n-type material and the highest in the p-type one. In an n-i-p structure, a wider depletion zone of As precipitate exists in the n-i interface than the i-p interface. It is also found that for a heterostructure containing materials with different bond strengths, As precipitates tend to condense in the material with lower bond strength. This is due to the higher vacancy concentration in the material with lower bond strength. These results imply that materials with higher bond strength, such as AlGaAs and AlAs, are As diffusion barriers in heterostructures. Line defects are also shown to facilitate As precipitation because they provide extra vacancies.
UR - http://www.scopus.com/inward/record.url?scp=0032639389&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01324-4
DO - 10.1016/S0022-0248(98)01324-4
M3 - 會議論文
AN - SCOPUS:0032639389
SN - 0022-0248
VL - 201
SP - 212
EP - 216
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -