BCB-bridged distributed wideband SPST switch using 0.25-μm In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs

Cheng Kuo Lin, Wen Kai Wang, Yi Jen Chan, Hwann Kaeo Chiou

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In0.5Al0.5As-In0.5Ga0.5As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-Κ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In0.5Al0.5As-In0.5Ga 0.5As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3 × 107 cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature = 85 °C, humidity = 85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-Κ BCB layer is attractive for millimeter-wave circuit applications.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume52
Issue number1
DOIs
StatePublished - Jan 2005

Keywords

  • Benzocyclobutene (BCB)
  • Distributed single-pole-single through (SPST) switch
  • Electron transit time
  • Metamorphic high-electron mobility transistor (mHEMT)

Fingerprint

Dive into the research topics of 'BCB-bridged distributed wideband SPST switch using 0.25-μm In<sub>0.5</sub>Al<sub>0.5</sub>As-In<sub>0.5</sub>Ga<sub>0.5</sub>As metamorphic HEMTs'. Together they form a unique fingerprint.

Cite this