Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

Jin Wei Shi, Yu Tai Li, Ci Ling Pan, M. L. Lin, Y. S. Wu, W. S. Liu, J. I. Chyi

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Abstract

In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm2 vs 0.05 mA/μm2) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.

Original languageEnglish
Article number053512
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
StatePublished - 2006

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