Abstract
In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm2 vs 0.05 mA/μm2) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.
Original language | English |
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Article number | 053512 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 5 |
DOIs | |
State | Published - 2006 |