Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

W. K. Huang, Y. C. Liu, Y. M. Hsin

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.

Original languageEnglish
Pages (from-to)52-53
Number of pages2
JournalElectronics Letters
Volume44
Issue number1
DOIs
StatePublished - 2008

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