Band switching matching networks for SiGe 2.4/5.2/5.8 GHz dual-band three-mode low noise amplifier

Hwann Kaeo Chiou; Ping Chun Yeh; Cheng Chieh Lin; Joseph D.S. Deng

doi:10.1002/mop.22840

Band switching matching networks for SiGe 2.4/5.2/5.8 GHz dual-band three-mode low noise amplifier

Hwann Kaeo Chiou, Ping Chun Yeh, Cheng Chieh Lin, Joseph D.S. Deng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A dual-band three-mode low-noise amplifier was demonstrated by using 0.35-p.m SiGe BiCMOS technology. For dual-band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks were arranged at either 2- or 5-GHz band for dual-band three-mode LNA design. The fabricated chip was measured on an FR-4 in 2.4-, 5.2-, and 5.8-GHz bands, which achieved a power gain better than 15 dB, a noise figure of 4.2 dB, input/output return losses of 9 dB, and an input P_1dB of -23.5 dBm.

Original language	English
Pages (from-to)	2717-2721
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	49
Issue number	11
DOIs	https://doi.org/10.1002/mop.22840
State	Published - Nov 2007

Keywords

Band switching matching network
Dual-band three-mode
Low-noise amplifier
WLAN

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10.1002/mop.22840

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title = "Band switching matching networks for SiGe 2.4/5.2/5.8 GHz dual-band three-mode low noise amplifier",

abstract = "A dual-band three-mode low-noise amplifier was demonstrated by using 0.35-p.m SiGe BiCMOS technology. For dual-band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks were arranged at either 2- or 5-GHz band for dual-band three-mode LNA design. The fabricated chip was measured on an FR-4 in 2.4-, 5.2-, and 5.8-GHz bands, which achieved a power gain better than 15 dB, a noise figure of 4.2 dB, input/output return losses of 9 dB, and an input P1dB of -23.5 dBm.",

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AU - Chiou, Hwann Kaeo

AU - Yeh, Ping Chun

AU - Lin, Cheng Chieh

AU - Deng, Joseph D.S.

PY - 2007/11

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AB - A dual-band three-mode low-noise amplifier was demonstrated by using 0.35-p.m SiGe BiCMOS technology. For dual-band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks were arranged at either 2- or 5-GHz band for dual-band three-mode LNA design. The fabricated chip was measured on an FR-4 in 2.4-, 5.2-, and 5.8-GHz bands, which achieved a power gain better than 15 dB, a noise figure of 4.2 dB, input/output return losses of 9 dB, and an input P1dB of -23.5 dBm.

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Band switching matching networks for SiGe 2.4/5.2/5.8 GHz dual-band three-mode low noise amplifier

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Keywords

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