A dual-band three-mode low-noise amplifier was demonstrated by using 0.35-p.m SiGe BiCMOS technology. For dual-band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks were arranged at either 2- or 5-GHz band for dual-band three-mode LNA design. The fabricated chip was measured on an FR-4 in 2.4-, 5.2-, and 5.8-GHz bands, which achieved a power gain better than 15 dB, a noise figure of 4.2 dB, input/output return losses of 9 dB, and an input P1dB of -23.5 dBm.
- Band switching matching network
- Dual-band three-mode
- Low-noise amplifier