Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

J. L. Shieh, J. L. Chyi, R. J. Lin, R. M. Lin, J. W. Pan

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

Original languageEnglish
Pages (from-to)2172-2173
Number of pages2
JournalElectronics Letters
Volume30
Issue number25
DOIs
StatePublished - 24 Nov 1994

Keywords

  • Band structure
  • Gallium indium arsenide
  • Semiconductor junctions

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