Abstract
Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.
Original language | English |
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Pages (from-to) | 2172-2173 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 30 |
Issue number | 25 |
DOIs | |
State | Published - 24 Nov 1994 |
Keywords
- Band structure
- Gallium indium arsenide
- Semiconductor junctions