Abstract
GaAs1-xSbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs1-xSbx/GaAs system. The method for determining the band offset Qvh is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs1-xSbx a value of the heavy-hole band offset (Qvh 1.7) has been obtained for GaAs1-xSbx/GaAs with x=0.1 establishing a type-II structure with electrons in GaAs layers and heavy and light holes in GaAs1-xSbx layers, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 10571-10577 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 38 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1988 |