Band lineup in GaAs1-xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

G. Ji, S. Agarwala, D. Huang, J. Chyi, H. Morkoç

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

GaAs1-xSbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs1-xSbx/GaAs system. The method for determining the band offset Qvh is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs1-xSbx a value of the heavy-hole band offset (Qvh 1.7) has been obtained for GaAs1-xSbx/GaAs with x=0.1 establishing a type-II structure with electrons in GaAs layers and heavy and light holes in GaAs1-xSbx layers, respectively.

Original languageEnglish
Pages (from-to)10571-10577
Number of pages7
JournalPhysical Review B
Volume38
Issue number15
DOIs
StatePublished - 1988

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