Balun bandpass filter with wide upper stopband using silicon-based integrated passive device technology

Chia Feng Chang, Yo Shen Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, a compact transformer-coupled balun bandpass filter is presented. The proposed balun bandpass filter features a compact chip size, and it can be designed according to the desired bandpass response and reference impedance. Specifically, a balun bandpass filter with 3rd-order bandpass response is demonstrated using the silicon-based integrated passive device process. The chip size is 2.5 mm×1.8 mm for a center frequency f0 of 2.4 GHz and a bandwidth of about 11.5%. The corresponding electrical size is only about 0.020λ0 × 0.014λ0 at 2.4 GHz. In addition, a wide 40-dB upper stopband from 3.76 up to 14 GHz is achieved.

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479964505
DOIs
StatePublished - 10 Nov 2015
EventIEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015 - Suzhou, China
Duration: 1 Jul 20153 Jul 2015

Publication series

Name2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015 - Proceedings

Conference

ConferenceIEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015
Country/TerritoryChina
CitySuzhou
Period1/07/153/07/15

Keywords

  • Balun
  • bandpass filter
  • integrated passive device
  • transformer

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