Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

C. Y. Liu; Y. C. Hsu; Y. J. Hu; T. S. Huang; C. T. Lu; A. T. Wu

doi:10.1149/2.004402ssl

Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

C. Y. Liu, Y. C. Hsu, Y. J. Hu, T. S. Huang, C. T. Lu, A. T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu ₆Sn₅ compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu₆Sn₅ compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu₆Sn₅ compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

Original language	English
Pages (from-to)	P17-P19
Journal	ECS Solid State Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/2.004402ssl
State	Published - 2014

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title = "Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface",

abstract = "A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.",

author = "Liu, {C. Y.} and Hsu, {Y. C.} and Hu, {Y. J.} and Huang, {T. S.} and Lu, {C. T.} and Wu, {A. T.}",

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T1 - Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

AU - Liu, C. Y.

AU - Hsu, Y. C.

AU - Hu, Y. J.

AU - Huang, T. S.

AU - Lu, C. T.

AU - Wu, A. T.

PY - 2014

Y1 - 2014

N2 - A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

AB - A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

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U2 - 10.1149/2.004402ssl

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M3 - 期刊論文

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VL - 3

SP - P17-P19

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 2

ER -

Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

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