Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM

Bing Chuan Bai; Kun Lun Luo; Chen An Chen; Yee Wen Chen; Ming Hsueh Wu; Chun Lung Hsu; Liang Chia Cheng; James C.M. Li

doi:10.1109/ATS.2013.32

Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM

Bing Chuan Bai, Kun Lun Luo, Chen An Chen, Yee Wen Chen, Ming Hsueh Wu, Chun Lung Hsu, Liang Chia Cheng, James C.M. Li

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.

Original language	English
Article number	6690628
Pages (from-to)	123-127
Number of pages	5
Journal	Proceedings of the Asian Test Symposium
DOIs	https://doi.org/10.1109/ATS.2013.32
State	Published - 2013
Event	2013 22nd Asian Test Symposium, ATS 2013 - Yilan, Taiwan Duration: 18 Nov 2013 → 21 Nov 2013

Keywords

Defect analysis
Memristor
Nonvolatile SRAM
Resistive RAM
Rnv8T

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10.1109/ATS.2013.32

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title = "Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM",

abstract = "Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.",

keywords = "Defect analysis, Memristor, Nonvolatile SRAM, Resistive RAM, Rnv8T",

author = "Bai, {Bing Chuan} and Luo, {Kun Lun} and Chen, {Chen An} and Chen, {Yee Wen} and Wu, {Ming Hsueh} and Hsu, {Chun Lung} and Cheng, {Liang Chia} and Li, {James C.M.}",

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pages = "123--127",

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TY - JOUR

T1 - Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM

AU - Bai, Bing Chuan

AU - Luo, Kun Lun

AU - Chen, Chen An

AU - Chen, Yee Wen

AU - Wu, Ming Hsueh

AU - Hsu, Chun Lung

AU - Cheng, Liang Chia

AU - Li, James C.M.

PY - 2013

Y1 - 2013

N2 - Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.

AB - Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.

KW - Defect analysis

KW - Memristor

KW - Nonvolatile SRAM

KW - Resistive RAM

KW - Rnv8T

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DO - 10.1109/ATS.2013.32

M3 - 會議論文

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SN - 1081-7735

SP - 123

EP - 127

JO - Proceedings of the Asian Test Symposium

JF - Proceedings of the Asian Test Symposium

M1 - 6690628

T2 - 2013 22nd Asian Test Symposium, ATS 2013

Y2 - 18 November 2013 through 21 November 2013

ER -

Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM

Abstract

Keywords

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