In this work, a novel In0.52Al0.48As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with a special p-side up etched mesa structure to zero the electric (E)-field at the periphery of this APD's multiplication (M-) layer, the edge breakdown phenomenon can be eliminated. This in turn leads to the simultaneous high-speed, high-saturation-power, high responsivity, and low-dark current performance characteristics of our APDs, which are essential for high-performance coherent receiver applications. The demonstrated device, with its simple top-illuminated structure exhibits a wide optical-to-electrical (O-E) bandwidth (21 GHz), high responsivity (5.5 A/W at 0.9 Vbr), and saturation current as high as 8 mA with a large active diameter of 24 μm for easy optical alignment. Furthermore, the nonlinear driving of a wavelength sweeping laser in the self-heterodyne beating setup can generate an optical pulse train like waveform, providing an effective optical modulation depth of up to 158%, which leads to a maximum photo-generated RF power (at 10 GHz) from our APD as high as +5.5 dBm. The excellent performance of our demonstrated APDs opens up new possibilities for the next generation of coherent receivers.
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Accepted/In press - 2021|
- Avalanche photodiode
- p-i-n photodiode