Auto-correlation function analysis of crystallization in amorphous SiGe thin films

T. F. Chiang; W. W. Wu; S. L. Cheng; H. H. Lin; S. W. Lee; L. J. Chen

doi:10.1016/S0169-4332(03)00098-9

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

T. F. Chiang, W. W. Wu, S. L. Cheng, H. H. Lin, S. W. Lee, L. J. Chen

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

Original language	English
Pages (from-to)	339-343
Number of pages	5
Journal	Applied Surface Science
Volume	212-213
Issue number	SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00098-9
State	Published - 15 May 2003

Keywords

Amorphous
Auto-correlation function
Crystallization
Si
SiGe

Access to Document

10.1016/S0169-4332(03)00098-9

Cite this

@article{28e5679b00a4465c9b6779db2b134577,

title = "Auto-correlation function analysis of crystallization in amorphous SiGe thin films",

abstract = "The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.",

keywords = "Amorphous, Auto-correlation function, Crystallization, Si, SiGe",

author = "Chiang, {T. F.} and Wu, {W. W.} and Cheng, {S. L.} and Lin, {H. H.} and Lee, {S. W.} and Chen, {L. J.}",

year = "2003",

month = may,

day = "15",

doi = "10.1016/S0169-4332(03)00098-9",

language = "???core.languages.en_GB???",

volume = "212-213",

pages = "339--343",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "SPEC.",

}

TY - JOUR

T1 - Auto-correlation function analysis of crystallization in amorphous SiGe thin films

AU - Chiang, T. F.

AU - Wu, W. W.

AU - Cheng, S. L.

AU - Lin, H. H.

AU - Lee, S. W.

AU - Chen, L. J.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

AB - The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

KW - Amorphous

KW - Auto-correlation function

KW - Crystallization

KW - Si

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=0038241601&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00098-9

DO - 10.1016/S0169-4332(03)00098-9

M3 - 期刊論文

AN - SCOPUS:0038241601

SN - 0169-4332

VL - 212-213

SP - 339

EP - 343

JO - Applied Surface Science

JF - Applied Surface Science

IS - SPEC.

ER -

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this