Silicon carbide (SiC) has emerged as a candidate material for next-generation power devices to replace traditional silicon power devices. They feature smaller size, faster switching speed, simpler cooling, and greater reliability than Si-MOSFETs. To date, however, the thermal conductance of GeC-based power MOSFETs is unclear. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
- atomistic simulations
- first-principles molecular dynamics calculations
- thermal conductivity