Atomistic simulations of thermal conductivity in novel GeC channel materials from first-principles molecular dynamics calculations

Shao Chen Lee, Yu Ting Chen, Cheng Rui Liu, Sheng Min Wang, Ying Tsan Tang

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon carbide (SiC) has emerged as a candidate material for next-generation power devices to replace traditional silicon power devices. They feature smaller size, faster switching speed, simpler cooling, and greater reliability than Si-MOSFETs. To date, however, the thermal conductance of GeC-based power MOSFETs is unclear. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.

Original languageEnglish
Article numberSC8001
JournalJapanese Journal of Applied Physics
Volume62
DOIs
StatePublished - 1 Apr 2023

Keywords

  • GeC
  • SiC
  • atomistic simulations
  • first-principles molecular dynamics calculations
  • thermal conductivity

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