Application of GalnP/GaAs DHBT's to power amplifiers for wireless communications

Pin Fan Chen, Yue Ming Tony Hsin, Rebecca J. Welty, Peter M. Asbeck, Richard L. Pierson, Peter J. Zampardi, W. J. Ho, M. C. Vincent Ho, M. Frank Chang

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GalnP/GaAs double-heterojunction bipolar transistors with GalnP collectors can improve over GaAs single-heterojunction bipolar transistors (HBT's) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBT's in switching mode can be used.

Original languageEnglish
Pages (from-to)1433-1438
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number8
StatePublished - 1999


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