@article{949ba2b99f2d49dea556cd6642528d42,
title = "Application of GalnP/GaAs DHBT's to power amplifiers for wireless communications",
abstract = "Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GalnP/GaAs double-heterojunction bipolar transistors with GalnP collectors can improve over GaAs single-heterojunction bipolar transistors (HBT's) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBT's in switching mode can be used.",
author = "Chen, {Pin Fan} and Hsin, {Yue Ming Tony} and Welty, {Rebecca J.} and Asbeck, {Peter M.} and Pierson, {Richard L.} and Zampardi, {Peter J.} and Ho, {W. J.} and {Vincent Ho}, {M. C.} and {Frank Chang}, M.",
note = "Funding Information: Manuscript received December 16, 1998; revised March 1999. This work was supported in part by the Army Research Office under the Multidisiplinary Research Initiative “Low Power and Low Noise Electronics Technologies for Wireless Communications.” P.-F. Chen is with the University of California at San Diego, La Jolla, CA 92093-0407 USA, and also with Global Communication Semiconductors, Torrance, CA 90505 USA. Y. T. Hsin is was with the University of California at San Diego, La Jolla, CA 92093-0407 USA. He is now with the National Central University, Chung-Li, Taiwan, R.O.C. R. J. Welty and P. M. Asbeck are with the University of California at San Diego, La Jolla, CA 92093-0407 USA. R. L. Pierson, P. J. Zampardi, and M. C. V. Ho are with Rockwell Science Center, Thousand Oaks, CA 91360 USA. W.-J. Ho is with Network Device Inc., Sunnyvale, CA 94089 USA. M. F. Chang is with the Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90024 USA. Publisher Item Identifier S 0018-9480(99)06081-0.",
year = "1999",
doi = "10.1109/22.780391",
language = "???core.languages.en_GB???",
volume = "47",
pages = "1433--1438",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
number = "8",
}