Antireflection with graphene oxide

Liang Chun Chen; Chun Tien Yu; Yu Chang Peng; Jing Jie Hung; Hung Ming Chang; Shien Der Tzeng; Chih Ming Wang; Chun Chieh Lin; Chu Hsuan Lin

doi:10.1364/OME.6.000008

Antireflection with graphene oxide

Liang Chun Chen, Chun Tien Yu, Yu Chang Peng, Jing Jie Hung, Hung Ming Chang, Shien Der Tzeng, Chih Ming Wang, Chun Chieh Lin, Chu Hsuan Lin

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Graphene oxide (GO) obtained by chemical exfoliation exhibits a quasi-2D structure. Its refractive index is very close to the theoretically predicted best refractive index for a single antireflection coating layer between air and Si. The robust honeycomb plane structure of GO makes it a promising mask candidate for surface texturizing. Here, we demonstrate different GO distributions on Si, and report the reflection properties before and after etching. For an etched Si substrate with suitable GO coating, the reflectance reached 2.1% at 667 nm. Preliminary 1.5-min-long etching of a p⁺nn⁺ solar cell with a GO mask boosted the efficiency from 7.09% to 7.55%.

Original language	English
Pages (from-to)	8-18
Number of pages	11
Journal	Optical Materials Express
Volume	6
Issue number	1
DOIs	https://doi.org/10.1364/OME.6.000008
State	Published - 2016

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title = "Antireflection with graphene oxide",

abstract = "Graphene oxide (GO) obtained by chemical exfoliation exhibits a quasi-2D structure. Its refractive index is very close to the theoretically predicted best refractive index for a single antireflection coating layer between air and Si. The robust honeycomb plane structure of GO makes it a promising mask candidate for surface texturizing. Here, we demonstrate different GO distributions on Si, and report the reflection properties before and after etching. For an etched Si substrate with suitable GO coating, the reflectance reached 2.1% at 667 nm. Preliminary 1.5-min-long etching of a p+nn+ solar cell with a GO mask boosted the efficiency from 7.09% to 7.55%.",

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AU - Chen, Liang Chun

AU - Yu, Chun Tien

AU - Peng, Yu Chang

AU - Hung, Jing Jie

AU - Chang, Hung Ming

AU - Tzeng, Shien Der

AU - Wang, Chih Ming

AU - Lin, Chun Chieh

AU - Lin, Chu Hsuan

PY - 2016

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N2 - Graphene oxide (GO) obtained by chemical exfoliation exhibits a quasi-2D structure. Its refractive index is very close to the theoretically predicted best refractive index for a single antireflection coating layer between air and Si. The robust honeycomb plane structure of GO makes it a promising mask candidate for surface texturizing. Here, we demonstrate different GO distributions on Si, and report the reflection properties before and after etching. For an etched Si substrate with suitable GO coating, the reflectance reached 2.1% at 667 nm. Preliminary 1.5-min-long etching of a p+nn+ solar cell with a GO mask boosted the efficiency from 7.09% to 7.55%.

AB - Graphene oxide (GO) obtained by chemical exfoliation exhibits a quasi-2D structure. Its refractive index is very close to the theoretically predicted best refractive index for a single antireflection coating layer between air and Si. The robust honeycomb plane structure of GO makes it a promising mask candidate for surface texturizing. Here, we demonstrate different GO distributions on Si, and report the reflection properties before and after etching. For an etched Si substrate with suitable GO coating, the reflectance reached 2.1% at 667 nm. Preliminary 1.5-min-long etching of a p+nn+ solar cell with a GO mask boosted the efficiency from 7.09% to 7.55%.

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SN - 2159-3930

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JO - Optical Materials Express

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Antireflection with graphene oxide

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