Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

H. M. Wu, J. Y. Lin, L. H. Peng, C. M. Lee, J. I. Chyi, E. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the annealing effects on the interfacial properties of gallium oxide (Ga2O3) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga20JGaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. Our I-V and C-V analysis on the MOS device reveals a low interfacial density of state 5 × 1010 cm-2ev-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga2O3 with post 01 annealing is suitable for power device application.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages406-407
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
Country/TerritoryUnited States
CityWashington
Period10/12/0312/12/03

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