Anisotropy of thermal conductivity in In2Se3 nanostructures

Cheng Lun Hsin, Jian Hao Huang, P. Spiewak, Łukasz Ciupiński, Sheng Wei Lee

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this report, α-In2Se3 single-crystal nanobelts and nanowires were grown in the thermal chemical vapor deposition furnace. The growth direction of the nanobelts was identified by standard microscopy techniques and was along the in-plane direction, while that of the nanowire was along the c-axis. The temperature-dependent thermal conductivity of the nanostructures was measured by a suspended-pattern technique, and it was found to fall into two ranges of values between 300 and 400 K owing to the difference in growth orientation. The experimental evidence presented herein is the anisotropy of phonon transport of the layered α-In2Se3, and the effect of bonding strength on the thermal conductivity at the nanoscale. This study would be helpful to the physical understanding and future design of In2Se3–based thermoelectric materials.

Original languageEnglish
Pages (from-to)867-870
Number of pages4
JournalApplied Surface Science
Volume494
DOIs
StatePublished - 15 Nov 2019

Keywords

  • Anisotropy
  • InSe
  • Nanostructures
  • TEM
  • Thermal conductivity

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