Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN

J. W. Chiou, S. Mookerjee, K. V.R. Rao, J. C. Jan, H. M. Tsai, K. Asokan, W. F. Pong, F. Z. Chien, M. H. Tsai, Y. K. Chang, Y. Y. Chen, J. F. Lee, C. C. Lee, G. C. Chi

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As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga-N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states.

Original languageEnglish
Pages (from-to)3389-3391
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - 28 Oct 2002


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