Anelasticity of GaN Epitaxial Layer in GaN LED

C. C. Chung, C. T. Yang, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this work, the anelasticity of theGaNlayer in theGaNlight-emitting-diode device was studied.The present results show that the forward-voltage ofGaNLED increases with time, as theGaNlight-emittingdiodewas maintained at a constant temperature of 100 °C.Wefound that the increase of the forwardvoltagewith time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaNLEDdevice).And, the delay-response of the internal electricalfields with time is caused by the anelasticity (time-dependent strain) of theGaNlayer. Therefore, using the correlation of strainpiezoelectric-forward voltage, a plot of thermal strain of theGaNlayer against time can be obtained by measuring the forward-voltage of the studiedGaNLEDagainst time.With the curves of the thermal strain ofGaNepi-layers versus time, the anelasticity of theGaNcompound can be studied. The key anelasticity parameter, characteristic relaxation time, of theGaNis defined to be 2623.76 min in thiswork.

Original languageEnglish
Article number105026
JournalMaterials Research Express
Issue number10
StatePublished - Oct 2016


  • Anelasticity
  • GaN LEDs
  • Piezoelectric material


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