Abstract
The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/InP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 188-191 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1996 |
| Event | Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: 21 Apr 1996 → 25 Apr 1996 |