Analysis of position-dependent light extraction of GaN-based LEDs

Tsung Xian Lee; Chao Ying Lin; Shih Hsin Ma; Ching Cherng Sun

doi:10.1364/OPEX.13.004175

Analysis of position-dependent light extraction of GaN-based LEDs

Tsung Xian Lee
, Chao Ying Lin
, Shih Hsin Ma
, Ching Cherng Sun

Research output: Contribution to journal › Article › peer-review

93 Scopus citations

Abstract

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

Original language	English
Pages (from-to)	4175-4179
Number of pages	5
Journal	Optics Express
Volume	13
Issue number	11
DOIs	https://doi.org/10.1364/OPEX.13.004175
State	Published - 30 May 2005

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10.1364/OPEX.13.004175

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title = "Analysis of position-dependent light extraction of GaN-based LEDs",

abstract = "The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.",

author = "Lee, \{Tsung Xian\} and Lin, \{Chao Ying\} and Ma, \{Shih Hsin\} and Sun, \{Ching Cherng\}",

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AU - Lee, Tsung Xian

AU - Lin, Chao Ying

AU - Ma, Shih Hsin

AU - Sun, Ching Cherng

PY - 2005/5/30

Y1 - 2005/5/30

N2 - The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

AB - The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

UR - https://www.scopus.com/pages/publications/21244433176

U2 - 10.1364/OPEX.13.004175

DO - 10.1364/OPEX.13.004175

M3 - 期刊論文

C2 - 19495330

AN - SCOPUS:21244433176

SN - 1094-4087

VL - 13

SP - 4175

EP - 4179

JO - Optics Express

JF - Optics Express

IS - 11

ER -

Analysis of position-dependent light extraction of GaN-based LEDs

Abstract

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