Analysis of antimony doped SnO 2 thin film by synchrotron grazing incidence X-ray diffraction

Yang Yi Lin, Albert T. Wu, Ching Shun Ku, Hsin Yi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In recent years, transparent conductive oxides (TCO) films have been widely used for solar cell due to its high transmittance, low sheet resistance and texture structure that could increase the efficiency. The purpose of this study is to analyze the amount of antimony doped in tin oxide thin films by synchrotron radiation grazing incidence X-Ray diffraction (GIXRD), which is a non-destructive testing method to measure the variations in lattice constant due to the doped antimony atoms. The physical properties, such as resistivity, hall mobility, carrier concentration, transmittance, haze were measured to discuss the enhancement from the dopants. The result of this research showed that the resistivity of the film was 1.4×10 -3 Ω-cm and the average transmittance from 400nm to 800nm could reach 89.3% with the doping of antimony.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages1768-1770
Number of pages3
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period19/06/1124/06/11

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