An ultra compact and broadband 15-75 GHz BPSK modulator using 0.13-μm CMOS process

Hong Yeh Chang, Pei Si Wu, Tian Wei Huang, Huei Wang, Yung Chih Tsai, Chun Hung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

In this paper, an ultra compact and broadband 15-75 GHz BPSK modulator using standard bulk 0.13-μm CMOS process is described. This modulator was constructed utilizing a new reflection-type topology, with the transmission lines implemented on the thick SiO2 layer as the substrate to avoid the lossy silicon. The overall chip size, including baseband, LO, and RF probe pads, is only 0.5 × 0.35 mm2. Compared with the previously reported GaAs modulators, this work demonstrates a more than 80% chip area reduction, and features an amplitude imbalance of within 0.5 dB with a phase imbalance of within 3° between 15 and 75 GHz. Regarding the modulation quality, the measured error vector magnitude (EVM) of the BPSK modulator at 40 GHz is within 3.5 and 7% for a data rate of 1 and 10 Mb/s, respectively. The LO-to-RF isolation is better than 40 dB among all the operation frequency. From continuous-wave (CW) spectrum characterization, the modulation bandwidth of the modulator is wider than 1 GHz.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages41-44
Number of pages4
DOIs
StatePublished - 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
Country/TerritoryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • BPSK
  • CMOS
  • MMIC
  • Millimeter-wave (MMW)
  • Modulator
  • Reflection-type

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