An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

Li Hsien Huang; Hwann Kaeo Chiou

doi:10.1109/apmc47863.2020.9331325

An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

Li Hsien Huang, Hwann Kaeo Chiou

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).

Original language	English
Title of host publication	2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding
Editors	Jie Sun, Wai Ho Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	257-259
Number of pages	3
ISBN (Electronic)	9781728169620
DOIs	https://doi.org/10.1109/apmc47863.2020.9331325
State	Published - 8 Dec 2020
Event	2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hong Kong Duration: 8 Dec 2020 → 11 Dec 2020

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2020-December
ISSN (Electronic)	2690-3946

Conference

Conference	2020 Asia-Pacific Microwave Conference, APMC 2020
Country/Territory	Hong Kong
City	Virtual, Hong Kong
Period	8/12/20 → 11/12/20

Keywords

GaN on SiC
X-band
multi-way combining network
power per area ratio
watt-level power amplifier

Access to Document

10.1109/apmc47863.2020.9331325

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(1/3)
Chiou, H.-K. (PI)
1/08/20 → 31/07/21
Project: Research

Cite this

Huang, L. H., & Chiou, H. K. (2020). An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier. In J. Sun, & W. H. Yu (Eds.), 2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding (pp. 257-259). Article 9331325 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/apmc47863.2020.9331325

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abstract = "This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).",

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Huang, LH & Chiou, HK 2020, An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier. in J Sun & WH Yu (eds), 2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding., 9331325, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 257-259, 2020 Asia-Pacific Microwave Conference, APMC 2020, Virtual, Hong Kong, Hong Kong, 8/12/20. https://doi.org/10.1109/apmc47863.2020.9331325

An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier. / Huang, Li Hsien; Chiou, Hwann Kaeo.
2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding. ed. / Jie Sun; Wai Ho Yu. Institute of Electrical and Electronics Engineers Inc., 2020. p. 257-259 9331325 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).

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An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

Abstract

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Keywords

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Projects

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(1/3)

Cite this