An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

Li Hsien Huang, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).

Original languageEnglish
Title of host publication2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding
EditorsJie Sun, Wai Ho Yu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-259
Number of pages3
ISBN (Electronic)9781728169620
DOIs
StatePublished - 8 Dec 2020
Event2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hong Kong
Duration: 8 Dec 202011 Dec 2020

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2020-December

Conference

Conference2020 Asia-Pacific Microwave Conference, APMC 2020
Country/TerritoryHong Kong
CityVirtual, Hong Kong
Period8/12/2011/12/20

Keywords

  • GaN on SiC
  • multi-way combining network
  • power per area ratio
  • watt-level power amplifier
  • X-band

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