@inproceedings{810a5e0236b947488a6f1c438e432c01,
title = "An Isolation-Improved Asymmetric T/R Switch with Two-Stage Networks in GaAs pHEMT for 5G NR FR2 n259 Band",
abstract = "The isolation of conventional asymmetric T/R switches is usually low, especially in the RX mode. To improve the isolation, an asymmetric T/R switch with two-stage networks used for both its TX and RX arms is proposed. The proposed T/R switch is designed for 5G NR FR2 n259 band and fabricated using WIN 0.15-μm GaAs pHEMT process. From 39.5 to 43.5 GHz, the measured TX-to-RX isolation is higher than 20.1 dB and 36.9 dB for the RX and TX modes, respectively.",
keywords = "5G NR, GaAs pHEMT, T/R switch, asymmetric, millimeter wave",
author = "Fu, {Jia Shiang}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 12th IEEE Global Conference on Consumer Electronics, GCCE 2023 ; Conference date: 10-10-2023 Through 13-10-2023",
year = "2023",
doi = "10.1109/GCCE59613.2023.10315358",
language = "???core.languages.en_GB???",
series = "GCCE 2023 - 2023 IEEE 12th Global Conference on Consumer Electronics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "808--809",
booktitle = "GCCE 2023 - 2023 IEEE 12th Global Conference on Consumer Electronics",
}