An integrated dual-band SiGe HBT low noise amplifier

Chen Yang Huang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A common-base cascade dual-hand low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35(on BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size Is 0.86 × 0.58 mm2.

Original languageEnglish
Title of host publicationProceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology
Subtitle of host publicationIntegrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005
Pages187-190
Number of pages4
DOIs
StatePublished - 2005
Event2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005 - Singapore, Singapore
Duration: 30 Nov 20052 Dec 2005

Publication series

NameProceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005
Volume2005

Conference

Conference2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005
Country/TerritorySingapore
CitySingapore
Period30/11/052/12/05

Keywords

  • Dual-band
  • HBT
  • LNA
  • Low noise amplifier

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