An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K

Lin Jiang, Sheng S. Li, Nien Tze Yeh, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection waveband in 6.7∼11.5 μm and operating temperature up to 260K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6μm to 8.4μm when the temperature rises from 40 to 260K. The background limited performance (BLIP) detectivity (D*BLIP) measured at Vb=1.5 V, T=77K and λp = 7.6 μm was found to be 1.25×1010 cm-Hz1/2/W, with a corresponding responsivity of 0.22A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.

Original languageEnglish
Pages (from-to)677-684
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5074
DOIs
StatePublished - 2003
EventInfrared Technology and Applications XXIX - Orlando, FL, United States
Duration: 21 Apr 200325 Apr 2003

Keywords

  • Dark current
  • Detectivity
  • InGaAs/GaAs
  • Quantum dot infrared photodetector (QDIP)
  • Spectral responsivity

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