Data retention time distribution of a dynamic random access memory (DRAM) has a heavy impact on its yield, power, and performance. Accurate and detailed information of data retention time distribution thus is very important for the DRAM designer and user. This paper proposes an FPGA-based test platform for analyzing the data retention time distribution of a DRAM. Based on the test platform, a test flow is also proposed to classify the DRAM cells with different data retention times with respect to different supply voltage and temperature. We have demonstrated the test platform and test flow using a Micron 2Gb DRAM.