An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

Chia Cherng Chang; Szu Ju Li; Yao Tsung Tsai

doi:10.1002/jnm.612

An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

Chia Cherng Chang, Szu Ju Li, Yao Tsung Tsai

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of the electric field distribution is classified into the vertical and horizontal integrations. In this paper, we use the equivalent-circuit model to demonstrate the flat-band voltage of the non-ideal MOS-C. The equivalent-circuit model of Poisson's equation includes two fixed charges Q′_f1 and Q′_f2 in the oxide layer region. Because the horizontal integration method is the superposition method, the equivalent-circuit model for the horizontal integration is divided into 3 types. Hence, the flat-band voltage for the horizontal integration is equal to the sum of the V _G1, V_G2, and V_G3 for the flat-band condition. By comparison, the simulation results of the horizontal integration method approximate to the vertical integration method.

Original language	English
Pages (from-to)	289-300
Number of pages	12
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	19
Issue number	3
DOIs	https://doi.org/10.1002/jnm.612
State	Published - May 2006

Keywords

Flat-band voltage
Horizontal integration
MOS-C
Vertical integration

Access to Document

10.1002/jnm.612

Cite this

@article{f562f5904cb44a1ba1dc8d1d8f5487d6,

title = "An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation",

abstract = "The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of the electric field distribution is classified into the vertical and horizontal integrations. In this paper, we use the equivalent-circuit model to demonstrate the flat-band voltage of the non-ideal MOS-C. The equivalent-circuit model of Poisson's equation includes two fixed charges Q′f1 and Q′f2 in the oxide layer region. Because the horizontal integration method is the superposition method, the equivalent-circuit model for the horizontal integration is divided into 3 types. Hence, the flat-band voltage for the horizontal integration is equal to the sum of the V G1, VG2, and VG3 for the flat-band condition. By comparison, the simulation results of the horizontal integration method approximate to the vertical integration method.",

keywords = "Flat-band voltage, Horizontal integration, MOS-C, Vertical integration",

author = "Chang, {Chia Cherng} and Li, {Szu Ju} and Tsai, {Yao Tsung}",

year = "2006",

month = may,

doi = "10.1002/jnm.612",

language = "???core.languages.en_GB???",

volume = "19",

pages = "289--300",

journal = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields",

issn = "0894-3370",

number = "3",

}

TY - JOUR

T1 - An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

AU - Chang, Chia Cherng

AU - Li, Szu Ju

AU - Tsai, Yao Tsung

PY - 2006/5

Y1 - 2006/5

N2 - The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of the electric field distribution is classified into the vertical and horizontal integrations. In this paper, we use the equivalent-circuit model to demonstrate the flat-band voltage of the non-ideal MOS-C. The equivalent-circuit model of Poisson's equation includes two fixed charges Q′f1 and Q′f2 in the oxide layer region. Because the horizontal integration method is the superposition method, the equivalent-circuit model for the horizontal integration is divided into 3 types. Hence, the flat-band voltage for the horizontal integration is equal to the sum of the V G1, VG2, and VG3 for the flat-band condition. By comparison, the simulation results of the horizontal integration method approximate to the vertical integration method.

AB - The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of the electric field distribution is classified into the vertical and horizontal integrations. In this paper, we use the equivalent-circuit model to demonstrate the flat-band voltage of the non-ideal MOS-C. The equivalent-circuit model of Poisson's equation includes two fixed charges Q′f1 and Q′f2 in the oxide layer region. Because the horizontal integration method is the superposition method, the equivalent-circuit model for the horizontal integration is divided into 3 types. Hence, the flat-band voltage for the horizontal integration is equal to the sum of the V G1, VG2, and VG3 for the flat-band condition. By comparison, the simulation results of the horizontal integration method approximate to the vertical integration method.

KW - Flat-band voltage

KW - Horizontal integration

KW - MOS-C

KW - Vertical integration

UR - http://www.scopus.com/inward/record.url?scp=33646674685&partnerID=8YFLogxK

U2 - 10.1002/jnm.612

DO - 10.1002/jnm.612

M3 - 期刊論文

AN - SCOPUS:33646674685

SN - 0894-3370

VL - 19

SP - 289

EP - 300

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

ER -

An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

Abstract

Keywords

Access to Document

Fingerprint

Cite this