An electrical testing method for blind through silicon vias (TSVs) for 3D IC integration

Shyh Shyuan Sheu, Zhe Hui Lin, Jui Feng Hung, John H. Lau, Peng Shu Chen, Shih Hsien Wu, Keng Li Su, Chih Sheng Lin, Shinn Juh Lai, Kuo Hsing Cheng, Tzu Kun Ku, Wei Chung Lo, Ming Jer Kao

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


This paper proposes a 3D IC integration TSV testing apparatus, primarily using at least one set of TSV component testing devices with a specific design. Under complex technological conditions, such as varying depth-width ratios of TSVs and heterogeneous IC integration, as well as the principle of different coupling parasitic parameters between TSVs, the TSV coupling measuring device designed for specific purposes in coordination with a measuring method for high-frequency coupling TSV S-parameters, achieves the function of monitoring the SiO2 thickness completeness of TSVs. This feasible approach further allows judgment of whether subsequent processes can continue, effectively reducing costs.

Original languageEnglish
Pages (from-to)140-145
Number of pages6
JournalJournal of Microelectronics and Electronic Packaging
Issue number4
StatePublished - 2011


  • 3D IC integration
  • TSV electrical testing method and guidelines
  • Through silicon via (TSV)


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