@inproceedings{198eac298b3b461dafa99f8258e2d581,
title = "An efficient trapped-charge calculation in amorphous silicon for device simulation",
abstract = "We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. in this efficient model, the trappedcharge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.",
author = "Tsai, {Yao Tsung} and Hong, {Kuo Don} and Yuan, {Yin Lun}",
note = "Publisher Copyright: {\textcopyright} 1993 IEEE.; 1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 ; Conference date: 06-03-1993 Through 07-03-1993",
year = "1993",
doi = "10.1109/SMS.1993.664564",
language = "???core.languages.en_GB???",
series = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "75--76",
booktitle = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",
}