An efficient light-harvesting scheme using SiO 2 nanorods for InGaN multiple quantum well solar cells

C. H. Ho, G. J. Lin, P. H. Fu, C. A. Lin, P. C. Yang, I. Min Chan, K. Y. Lai, J. H. He

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

SiO 2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO 2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm 2. The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.

Original languageEnglish
Pages (from-to)194-198
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume103
DOIs
StatePublished - Aug 2012

Keywords

  • Antireflection
  • GaN
  • InGaN
  • Light harvesting
  • Nanorods

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