An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon

Yao Tsung Tsai; Kuo Don Hong; Yin Lun Yuan

doi:10.1109/43.285246

An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon

Yao Tsung Tsai, Kuo Don Hong, Yin Lun Yuan

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.

Original language	English
Pages (from-to)	725-728
Number of pages	4
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/43.285246
State	Published - Jun 1994

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@article{ebc4a8c2adf34250b2da51cf575a2f51,

title = "An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon",

abstract = "We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.",

author = "Tsai, {Yao Tsung} and Hong, {Kuo Don} and Yuan, {Yin Lun}",

note = "Funding Information: Manuscript received January 1, 1992; revised January 13, 1994. This research was sponsored by the National Science Council of the Republic of China under contract NSC82-0404-E008-076. This paper was recommended by Associate Editor D. Scharfetter. The authors are with the Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China. IEEE Log Number 9400123.",

year = "1994",

month = jun,

doi = "10.1109/43.285246",

language = "???core.languages.en_GB???",

volume = "13",

pages = "725--728",

journal = "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems",

issn = "0278-0070",

number = "6",

}

TY - JOUR

T1 - An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon

AU - Tsai, Yao Tsung

AU - Hong, Kuo Don

AU - Yuan, Yin Lun

N1 - Funding Information: Manuscript received January 1, 1992; revised January 13, 1994. This research was sponsored by the National Science Council of the Republic of China under contract NSC82-0404-E008-076. This paper was recommended by Associate Editor D. Scharfetter. The authors are with the Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China. IEEE Log Number 9400123.

PY - 1994/6

Y1 - 1994/6

N2 - We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.

AB - We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.

UR - http://www.scopus.com/inward/record.url?scp=0028447975&partnerID=8YFLogxK

U2 - 10.1109/43.285246

DO - 10.1109/43.285246

M3 - 期刊論文

AN - SCOPUS:0028447975

SN - 0278-0070

VL - 13

SP - 725

EP - 728

JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IS - 6

ER -

An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon

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