An analytical model for silicon-on-insulator reduced surface field devices with semi-insulating polycrystalline silicon shielding layer

Chi Hon Ho, Chien Nan Liao, Feng Tso Chien, Yao Tsung Tsai

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An analytical model is presented to determine the potential and electric field distribution along the semiconductor surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semiinsulating polycrystalline silicon (SIPOS) layer inserted between a silicon layer and a buried oxide. An improvement in the breakdown voltage due to the presence of the SIPOS shielding layer is demonstrated. Numerical simulations using medici are shown to support the analytical model.

Original languageEnglish
Pages (from-to)5369-5373
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number7 PART 1
DOIs
StatePublished - 11 Jul 2008

Keywords

  • MEDICI
  • RESURF
  • Shielding layer
  • SIPOS
  • SOI

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