An 8.7 GHz Si photodiode in standard 0.18-μm CMOS technology

Fang Ping Chou, Ching Wen Wang, Guan Yu Chen, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

This work investigates a new Si photodiode by 0.18-μm CMOS technology for optical communication at 850-nm. The structure of the proposed Si PD is in octagonal shape and consists of PN diodes with deep N-well surrounded. An extra voltage on deep N-well is required to bias deep N-well to block holes and collect electrons. The measured bandwidth and responsivity are 8.7 GHz and 0.018 A/W, respectively, while biasing at 11.4 V.

Original languageEnglish
Title of host publicationTechnical Digest - 15th OptoElectronics and Communications Conference, OECC2010
Pages826-827
Number of pages2
StatePublished - 2010
Event15th OptoElectronics and Communications Conference, OECC2010 - Sapporo, Japan
Duration: 5 Jul 20109 Jul 2010

Publication series

NameTechnical Digest - 15th OptoElectronics and Communications Conference, OECC2010

Conference

Conference15th OptoElectronics and Communications Conference, OECC2010
Country/TerritoryJapan
CitySapporo
Period5/07/109/07/10

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