@inproceedings{b232533322d24d7ba9122c009ae666af,
title = "An 8.7 GHz Si photodiode in standard 0.18-μm CMOS technology",
abstract = "This work investigates a new Si photodiode by 0.18-μm CMOS technology for optical communication at 850-nm. The structure of the proposed Si PD is in octagonal shape and consists of PN diodes with deep N-well surrounded. An extra voltage on deep N-well is required to bias deep N-well to block holes and collect electrons. The measured bandwidth and responsivity are 8.7 GHz and 0.018 A/W, respectively, while biasing at 11.4 V.",
author = "Chou, {Fang Ping} and Wang, {Ching Wen} and Chen, {Guan Yu} and Hsin, {Yue Ming}",
year = "2010",
language = "???core.languages.en_GB???",
isbn = "9784885522451",
series = "Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010",
pages = "826--827",
booktitle = "Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010",
note = "15th OptoElectronics and Communications Conference, OECC2010 ; Conference date: 05-07-2010 Through 09-07-2010",
}