Amorphous Si/Au wafer bonding

P. H. Chen; C. L. Lin; C. Y. Liu

doi:10.1063/1.2719025

Amorphous Si/Au wafer bonding

P. H. Chen, C. L. Lin, C. Y. Liu

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.

Original language	English
Article number	132120
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2719025
State	Published - 2007

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title = "Amorphous Si/Au wafer bonding",

abstract = "The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.",

author = "Chen, {P. H.} and Lin, {C. L.} and Liu, {C. Y.}",

note = "Funding Information: The authors are grateful for the support of the NSC (National Science Council of Taiwan) and the Ministry of Economic Affairs, ROC Department of Industrial Technology, Grant No. 94-EC-17-A-07-S1-043. ",

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T1 - Amorphous Si/Au wafer bonding

AU - Chen, P. H.

AU - Lin, C. L.

AU - Liu, C. Y.

N1 - Funding Information: The authors are grateful for the support of the NSC (National Science Council of Taiwan) and the Ministry of Economic Affairs, ROC Department of Industrial Technology, Grant No. 94-EC-17-A-07-S1-043.

PY - 2007

Y1 - 2007

N2 - The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.

AB - The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.

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U2 - 10.1063/1.2719025

DO - 10.1063/1.2719025

M3 - 期刊論文

AN - SCOPUS:34047107749

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132120

ER -

Amorphous Si/Au wafer bonding

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