Amorphous Si/Au wafer bonding

P. H. Chen, C. L. Lin, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.

Original languageEnglish
Article number132120
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
StatePublished - 2007

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