AlN/GaN heterostructure prepared using a low-temperature helicon sputtering system

J. D. Wu, W. C. Chien, H. L. Kao, J. I. Chyi, C. H. Hsu

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4 Scopus citations

Abstract

Single-crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300°C using a helicon sputtering system. The crystallinity of the AlN films and the in-plane axes relation between the films and substrates were characterized by X-ray rocking curve and phi-scan measurements. The two-dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 10 13 cm -2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high-power, high-speed and high-temperature electronics.

Original languageEnglish
Pages (from-to)3349-3353
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number10
DOIs
StatePublished - Oct 2007

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