Single-crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300°C using a helicon sputtering system. The crystallinity of the AlN films and the in-plane axes relation between the films and substrates were characterized by X-ray rocking curve and phi-scan measurements. The two-dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 10 13 cm -2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high-power, high-speed and high-temperature electronics.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|State||Published - Oct 2007|