AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Akihiko Kikuchi; Ryo Bannai; Katsumi Kishino; Chia Ming Lee; Jen Inn Chyi

doi:10.1063/1.1501157

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Akihiko Kikuchi, Ryo Bannai, Katsumi Kishino, Chia Ming Lee, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

128 Scopus citations

Abstract

AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al₂O₃ substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180A/cm². A peak-to-valley current ratio as high as 32 was obtained.

Original language	English
Pages (from-to)	1729-1731
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	9
DOIs	https://doi.org/10.1063/1.1501157
State	Published - 26 Aug 2002

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@article{9aae84b89bbd4d0e992ba43dd2e4b3ce,

title = "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy",

abstract = "AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180A/cm2. A peak-to-valley current ratio as high as 32 was obtained.",

author = "Akihiko Kikuchi and Ryo Bannai and Katsumi Kishino and Lee, {Chia Ming} and Chyi, {Jen Inn}",

year = "2002",

month = aug,

day = "26",

doi = "10.1063/1.1501157",

language = "???core.languages.en_GB???",

volume = "81",

pages = "1729--1731",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "9",

}

TY - JOUR

T1 - AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

AU - Kikuchi, Akihiko

AU - Bannai, Ryo

AU - Kishino, Katsumi

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2002/8/26

Y1 - 2002/8/26

N2 - AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180A/cm2. A peak-to-valley current ratio as high as 32 was obtained.

AB - AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180A/cm2. A peak-to-valley current ratio as high as 32 was obtained.

UR - http://www.scopus.com/inward/record.url?scp=79956003733&partnerID=8YFLogxK

U2 - 10.1063/1.1501157

DO - 10.1063/1.1501157

M3 - 期刊論文

AN - SCOPUS:79956003733

SN - 0003-6951

VL - 81

SP - 1729

EP - 1731

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

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