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All-polymer field-effect transistors using a brush gate dielectric
Ana B. Rodríguez
, Michael R. Tomlinson
, Saghar Khodabakhsh
,
Jui Fen Chang
, Fabrice Cousin
, Dieter Lott
, Henning Sirringhaus
, Wilhelm T.S. Huck
, Anthony M. Higgins
, Mark Geoghegan
Department of Optics and Photonics
Research output
:
Contribution to journal
›
Article
›
peer-review
7
Scopus citations
Overview
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Keyphrases
Gate Dielectric
100%
Poly(3-hexylthiophene) (P3HT)
100%
Polymer Field-effect Transistors
100%
All-polymer
100%
Heat Treatment
57%
Poly(methyl methacrylate)
28%
Brush Layer
28%
Annealing
14%
Device Performance
14%
Amount of Heat
14%
Hole Mobility
14%
Small Molecular
14%
Output Characteristics
14%
Interpenetration
14%
Asymmetric Interfaces
14%
Grafted Brushes
14%
Neutron Reflectometry
14%
Material Science
Heat Treatment
100%
Field Effect Transistor
100%
Dielectric Material
100%
Film
50%
Poly Methyl Methacrylate
50%
Hole Mobility
25%