Keyphrases
Aluminum Gallium Nitride (AlGaN)
100%
Carrier Scattering
50%
Current Gain Cutoff Frequency
50%
Dislocation
50%
Fmax
50%
Gate Leakage
50%
Heterostructure Field-effect Transistors
100%
Indium Gallium Nitride (InGaN)
100%
InGaN Channel
50%
Maximum Oscillation Frequency
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Pinch-off
50%
Room Temperature
50%
Sapphire
100%
Saturation Current Density
100%
Source Resistance
50%
Strain Field
50%
Threshold Voltage
50%
Transconductance
100%
Transistor
50%
Transmission Electron Microscopy
50%
Engineering
Chemical Vapor Deposition
50%
Current Gain
50%
Cutoff Frequency
50%
Field-Effect Transistor
100%
Heterojunctions
100%
Metal Organic Chemical Vapor Deposition
100%
Room Temperature
50%
Saturation Current Density
100%
Source Resistance
50%
Strain Field
50%
Vapor Deposition
50%
Material Science
Chemical Vapor Deposition
50%
Density
100%
Field Effect Transistor
100%
Heterojunction
100%
Metal-Organic Chemical Vapor Deposition
100%
Sapphire
100%
Transistor
50%
Transmission Electron Microscopy
50%
Earth and Planetary Sciences
Current Density
100%
Heterojunctions
100%
Metalorganic Chemical Vapor Deposition
100%
Room Temperature
50%
Threshold Voltage
50%
Transconductance
100%
Transmission Electron Microscopy
50%