AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

Che Ching Hsu, Pei Chien Shen, Yi Nan Zhong, Yue Ming Hsin

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2 Scopus citations


In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×109 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalMRS Advances
Issue number3
StatePublished - 2018


  • compound
  • devices
  • III-V


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