AlGaN/GaN high electron mobility transistors with a p-Type GaN cap layer

H. C. Tsai, S. C. Fan Chiang, Y. N. Zhong, Y. M. Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, AlGaN/GaN HEMTs with different types of p-GaN cap layers were fabricated and investigated. The p-GaN cap layer used in this study was for passivation study instead of forming enhancement-mode operation. The differences in p-GaN cap layers were Mg-doping concentration (1x10" and 3xl01 9 cm"1) and thickness (5 and 8 nm). Device with p-GaN cap of 8-nm and Mg-doping of 3x10" cm'3 showed the lowest gate leakage current, highest on/off current ratio (1.02xl06), highest breakdown voltage and least current collapse characteristics.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
PublisherElectrochemical Society Inc.
Pages53-57
Number of pages5
Edition7
ISBN (Electronic)9781607688358
ISBN (Print)9781607688358
DOIs
StatePublished - 2018
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States
Duration: 13 May 201817 May 2018

Publication series

NameECS Transactions
Number7
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
Country/TerritoryUnited States
CitySeattle
Period13/05/1817/05/18

Fingerprint

Dive into the research topics of 'AlGaN/GaN high electron mobility transistors with a p-Type GaN cap layer'. Together they form a unique fingerprint.

Cite this