AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure

W. T. Lin; W. C. Lin; Y. N. Zhong; Y. M. Hsin

doi:10.1149/08507.0049ecst

AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure

W. T. Lin, W. C. Lin, Y. N. Zhong, Y. M. Hsin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backagte bias was -14 V. The on/off current ratio was in the range of 10 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backagte structure.

Original language	English
Title of host publication	ECS Transactions
Editors	J. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
Publisher	Electrochemical Society Inc.
Pages	49-52
Number of pages	4
Edition	7
ISBN (Electronic)	9781607688358
ISBN (Print)	9781607688358
DOIs	https://doi.org/10.1149/08507.0049ecst
State	Published - 2018
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States Duration: 13 May 2018 → 17 May 2018

Publication series

Name	ECS Transactions
Number	7
Volume	85
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
Country/Territory	United States
City	Seattle
Period	13/05/18 → 17/05/18

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10.1149/08507.0049ecst

Cite this

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title = "AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure",

abstract = "This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backagte bias was -14 V. The on/off current ratio was in the range of 10 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backagte structure.",

author = "Lin, {W. T.} and Lin, {W. C.} and Zhong, {Y. N.} and Hsin, {Y. M.}",

year = "2018",

doi = "10.1149/08507.0049ecst",

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booktitle = "ECS Transactions",

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note = "Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting ; Conference date: 13-05-2018 Through 17-05-2018",

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Lin, WT, Lin, WC, Zhong, YN & Hsin, YM 2018, AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure. in J Hite, V Chakrapani, J Zavada, TJ Anderson & S Kilgore (eds), ECS Transactions. 7 edn, ECS Transactions, no. 7, vol. 85, Electrochemical Society Inc., pp. 49-52, Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting, Seattle, United States, 13/05/18. https://doi.org/10.1149/08507.0049ecst

AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure. / Lin, W. T.; Lin, W. C.; Zhong, Y. N. et al.
ECS Transactions. ed. / J. Hite; V. Chakrapani; J. Zavada; T. J. Anderson; S. Kilgore. 7. ed. Electrochemical Society Inc., 2018. p. 49-52 (ECS Transactions; Vol. 85, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure

AU - Lin, W. T.

AU - Lin, W. C.

AU - Zhong, Y. N.

AU - Hsin, Y. M.

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N2 - This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backagte bias was -14 V. The on/off current ratio was in the range of 10 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backagte structure.

AB - This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backagte bias was -14 V. The on/off current ratio was in the range of 10 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backagte structure.

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T3 - ECS Transactions

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A2 - Chakrapani, V.

A2 - Zavada, J.

A2 - Anderson, T. J.

A2 - Kilgore, S.

PB - Electrochemical Society Inc.

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting

Y2 - 13 May 2018 through 17 May 2018

ER -

AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure

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