AlGaN/GaN high electron mobility transistors with a p-GaN backgate structure

W. T. Lin, W. C. Lin, Y. N. Zhong, Y. M. Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backagte bias was -14 V. The on/off current ratio was in the range of 10 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backagte structure.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
PublisherElectrochemical Society Inc.
Pages49-52
Number of pages4
Edition7
ISBN (Electronic)9781607688358
ISBN (Print)9781607688358
DOIs
StatePublished - 2018
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States
Duration: 13 May 201817 May 2018

Publication series

NameECS Transactions
Number7
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
Country/TerritoryUnited States
CitySeattle
Period13/05/1817/05/18

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