AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study

Chih Cheng Huang, Geng Yen Lee, Jen Inn Chyi, Hui Teng Cheng, Chen Pin Hsu, You Ren Hsu, Chia Hsien Hsu, Yu Fen Huang, Yuh Chang Sun, Chih Chen Chen, Sheng Shian Li, J. Andrew Yeh, Da Jeng Yao, Fan Ren, Yu Lin Wang

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Antibody-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect a short peptide consisting of 20 amino acids. One-binding-site model and two-binding-site model were used for the analysis of the electrical signals, revealing the number of binding sites on an antibody and the dissociation constants between the antibody and the short peptide. In the binding-site models, the surface coverage ratio of the short peptide on the sensor surface is relevant to the electrical signals resulted from the peptide-antibody binding on the HEMTs. Two binding sites on an antibody were observed and two dissociation constants, 4.404×10-11M and 1.596×10-9M, were extracted from the binding-site model through the analysis of the surface coverage ratio of the short peptide on the sensor surface. We have also shown that the conventional method to extract the dissociation constant from the linear regression of curve-fitting with Langmuir isotherm equation may lead to an incorrect information if the receptor has more than one binding site for the ligand. The limit of detection (LOD) of the sensor observed in the experimental result (~10pM of the short peptide) is very close to the LOD (around 2.7-3.4pM) predicted from the value of the smallest dissociation constants. The sensitivity of the sensor is not only dependent on the transistors, but also highly relies on the affinity of the ligand-receptor pair. The results demonstrate that the AlGaN/GaN HEMTs cannot only be used for biosensors, but also for the biological affinity study.

Original languageEnglish
Pages (from-to)717-722
Number of pages6
JournalBiosensors and Bioelectronics
Volume41
Issue number1
DOIs
StatePublished - 15 Mar 2013

Keywords

  • Binding affinity
  • Dissociation constants
  • GaN
  • High electron mobility transistors
  • Sensors

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