AlGaN/GaN HEMTs with 2DHG Back Gate Control

Wei Tse Lin, Wen Chia Liao, Yi Nan Zhong, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

Original languageEnglish
Pages (from-to)137-141
Number of pages5
JournalMRS Advances
Issue number3
StatePublished - 2018


  • electronic structure
  • III-V
  • piezoelectric


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