AlGaAs/GaAs HBTs with extrinsic base regrowth

Y. M. Hsin, N. Y. Li, C. W. Tu, P. M. Asbeck

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1 Scopus citations

Abstract

N-p-n abrupt AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with a 500 Å-thick GaAs base, and regrown thick extrinsic base layers of p+ AlGaAs/GaAs have been fabricated. The regrown extrinsic base layers allow easy contact to the base with low base resistance to achieve high fmax. fmax; was improved by a factor of ∼ 2 with regrown base compared to conventional processing, up to a value of 45 GHz in these non-self-aligned devices. The extrinsic base regrowth was done at 500°C by MOMBE, which employed low-temperature in situ etch using tris-dimethylaminoarsenic to remove residual oxide from the surface before regrowth.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalJournal of Crystal Growth
Volume188
Issue number1-4
DOIs
StatePublished - 1 Jun 1998

Keywords

  • HBT
  • In situ etch
  • MOMBE
  • Regrowth
  • TDMAAS

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