Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD

Chia Cheng Lu; Yu Lin Hsieh; Pei Shen Wu; Chien Chieh Lee; Yen Ho Chu; Jenq Yang Chang; I. Chen Chen; Tomi T. Li

doi:10.1109/CSTIC.2015.7153401

Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD

Chia Cheng Lu, Yu Lin Hsieh, Pei Shen Wu, Chien Chieh Lee, Yen Ho Chu, Jenq Yang Chang, I. Chen Chen, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we optimized the process conditions that led to nanocrystalline silicon (nc-Si:H) growth of doped silicon films as a back surface field (BSF) layer in a symmetric cell structure were prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) in terms of the phosphorus flow (0∼7840ppm) and substrate temperature (125-225°C) using a (PH₃/SiH₄/H₂/Ar) mixture. High quality of BSF layer on surface passivation was obtained after enough pre-deposition time at low electron temperature. The life time up to 1.5ms and concentrations > 10¹⁹ in 4cm² cells can be obtained. The plasma diagnostics related to nc-Si:H solar cell deposition process was performed simultaneously during the nc-Si:H solar cell deposition process using an optical emission spectrometer (OES) to observe the stability of the chamber condition. The spectroscopic ellipsometer (SE) and hall measurements were used to study their correlations with growth rate and microstructure of the film.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2015, CSTIC 2015
Editors	Cor Claeys, Qinghuang Lin, David Huang, Hanming Wu, Ru Huang, Kafei Lai, Ying Zhang, Beichao Zhang, Kuochun Wu, Larry Chen, Steve Liang, Peilin Song, Hsiang-Lan Lung, Dong Chen, Qi Wang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479972418
DOIs	https://doi.org/10.1109/CSTIC.2015.7153401
State	Published - 8 Jul 2015
Event	2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China Duration: 15 Mar 2015 → 16 Mar 2015

Publication series

Name	China Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference	2015 China Semiconductor Technology International Conference, CSTIC 2015
Country/Territory	China
City	Shanghai
Period	15/03/15 → 16/03/15

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10.1109/CSTIC.2015.7153401

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Lu, C. C., Hsieh, Y. L., Wu, P. S., Lee, C. C., Chu, Y. H., Chang, J. Y., Chen, I. C., & Li, T. T. (2015). Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD. In C. Claeys, Q. Lin, D. Huang, H. Wu, R. Huang, K. Lai, Y. Zhang, B. Zhang, K. Wu, L. Chen, S. Liang, P. Song, H.-L. Lung, D. Chen, & Q. Wang (Eds.), China Semiconductor Technology International Conference 2015, CSTIC 2015 Article 7153401 (China Semiconductor Technology International Conference 2015, CSTIC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2015.7153401

Lu, Chia Cheng ; Hsieh, Yu Lin ; Wu, Pei Shen et al. / Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD. China Semiconductor Technology International Conference 2015, CSTIC 2015. editor / Cor Claeys ; Qinghuang Lin ; David Huang ; Hanming Wu ; Ru Huang ; Kafei Lai ; Ying Zhang ; Beichao Zhang ; Kuochun Wu ; Larry Chen ; Steve Liang ; Peilin Song ; Hsiang-Lan Lung ; Dong Chen ; Qi Wang. Institute of Electrical and Electronics Engineers Inc., 2015. (China Semiconductor Technology International Conference 2015, CSTIC 2015).

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title = "Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD",

abstract = "In this paper, we optimized the process conditions that led to nanocrystalline silicon (nc-Si:H) growth of doped silicon films as a back surface field (BSF) layer in a symmetric cell structure were prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) in terms of the phosphorus flow (0∼7840ppm) and substrate temperature (125-225°C) using a (PH3/SiH4/H2/Ar) mixture. High quality of BSF layer on surface passivation was obtained after enough pre-deposition time at low electron temperature. The life time up to 1.5ms and concentrations > 1019 in 4cm2 cells can be obtained. The plasma diagnostics related to nc-Si:H solar cell deposition process was performed simultaneously during the nc-Si:H solar cell deposition process using an optical emission spectrometer (OES) to observe the stability of the chamber condition. The spectroscopic ellipsometer (SE) and hall measurements were used to study their correlations with growth rate and microstructure of the film.",

author = "Lu, {Chia Cheng} and Hsieh, {Yu Lin} and Wu, {Pei Shen} and Lee, {Chien Chieh} and Chu, {Yen Ho} and Chang, {Jenq Yang} and Chen, {I. Chen} and Li, {Tomi T.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 China Semiconductor Technology International Conference, CSTIC 2015 ; Conference date: 15-03-2015 Through 16-03-2015",

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editor = "Cor Claeys and Qinghuang Lin and David Huang and Hanming Wu and Ru Huang and Kafei Lai and Ying Zhang and Beichao Zhang and Kuochun Wu and Larry Chen and Steve Liang and Peilin Song and Hsiang-Lan Lung and Dong Chen and Qi Wang",

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Lu, CC, Hsieh, YL, Wu, PS, Lee, CC, Chu, YH, Chang, JY, Chen, IC & Li, TT 2015, Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD. in C Claeys, Q Lin, D Huang, H Wu, R Huang, K Lai, Y Zhang, B Zhang, K Wu, L Chen, S Liang, P Song, H-L Lung, D Chen & Q Wang (eds), China Semiconductor Technology International Conference 2015, CSTIC 2015., 7153401, China Semiconductor Technology International Conference 2015, CSTIC 2015, Institute of Electrical and Electronics Engineers Inc., 2015 China Semiconductor Technology International Conference, CSTIC 2015, Shanghai, China, 15/03/15. https://doi.org/10.1109/CSTIC.2015.7153401

Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD. / Lu, Chia Cheng; Hsieh, Yu Lin; Wu, Pei Shen et al.
China Semiconductor Technology International Conference 2015, CSTIC 2015. ed. / Cor Claeys; Qinghuang Lin; David Huang; Hanming Wu; Ru Huang; Kafei Lai; Ying Zhang; Beichao Zhang; Kuochun Wu; Larry Chen; Steve Liang; Peilin Song; Hsiang-Lan Lung; Dong Chen; Qi Wang. Institute of Electrical and Electronics Engineers Inc., 2015. 7153401 (China Semiconductor Technology International Conference 2015, CSTIC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD

AU - Lu, Chia Cheng

AU - Hsieh, Yu Lin

AU - Wu, Pei Shen

AU - Lee, Chien Chieh

AU - Chu, Yen Ho

AU - Chang, Jenq Yang

AU - Chen, I. Chen

AU - Li, Tomi T.

PY - 2015/7/8

Y1 - 2015/7/8

N2 - In this paper, we optimized the process conditions that led to nanocrystalline silicon (nc-Si:H) growth of doped silicon films as a back surface field (BSF) layer in a symmetric cell structure were prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) in terms of the phosphorus flow (0∼7840ppm) and substrate temperature (125-225°C) using a (PH3/SiH4/H2/Ar) mixture. High quality of BSF layer on surface passivation was obtained after enough pre-deposition time at low electron temperature. The life time up to 1.5ms and concentrations > 1019 in 4cm2 cells can be obtained. The plasma diagnostics related to nc-Si:H solar cell deposition process was performed simultaneously during the nc-Si:H solar cell deposition process using an optical emission spectrometer (OES) to observe the stability of the chamber condition. The spectroscopic ellipsometer (SE) and hall measurements were used to study their correlations with growth rate and microstructure of the film.

AB - In this paper, we optimized the process conditions that led to nanocrystalline silicon (nc-Si:H) growth of doped silicon films as a back surface field (BSF) layer in a symmetric cell structure were prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) in terms of the phosphorus flow (0∼7840ppm) and substrate temperature (125-225°C) using a (PH3/SiH4/H2/Ar) mixture. High quality of BSF layer on surface passivation was obtained after enough pre-deposition time at low electron temperature. The life time up to 1.5ms and concentrations > 1019 in 4cm2 cells can be obtained. The plasma diagnostics related to nc-Si:H solar cell deposition process was performed simultaneously during the nc-Si:H solar cell deposition process using an optical emission spectrometer (OES) to observe the stability of the chamber condition. The spectroscopic ellipsometer (SE) and hall measurements were used to study their correlations with growth rate and microstructure of the film.

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U2 - 10.1109/CSTIC.2015.7153401

DO - 10.1109/CSTIC.2015.7153401

M3 - 會議論文篇章

AN - SCOPUS:84941248947

T3 - China Semiconductor Technology International Conference 2015, CSTIC 2015

BT - China Semiconductor Technology International Conference 2015, CSTIC 2015

A2 - Claeys, Cor

A2 - Lin, Qinghuang

A2 - Huang, David

A2 - Wu, Hanming

A2 - Huang, Ru

A2 - Lai, Kafei

A2 - Zhang, Ying

A2 - Zhang, Beichao

A2 - Wu, Kuochun

A2 - Chen, Larry

A2 - Liang, Steve

A2 - Song, Peilin

A2 - Lung, Hsiang-Lan

A2 - Chen, Dong

A2 - Wang, Qi

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 China Semiconductor Technology International Conference, CSTIC 2015

Y2 - 15 March 2015 through 16 March 2015

ER -

Lu CC, Hsieh YL, Wu PS, Lee CC, Chu YH, Chang JY et al. Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD. In Claeys C, Lin Q, Huang D, Wu H, Huang R, Lai K, Zhang Y, Zhang B, Wu K, Chen L, Liang S, Song P, Lung HL, Chen D, Wang Q, editors, China Semiconductor Technology International Conference 2015, CSTIC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7153401. (China Semiconductor Technology International Conference 2015, CSTIC 2015). doi: 10.1109/CSTIC.2015.7153401

Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD

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