Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser

Yung Chen Cheng; Chi Chih Liao; Shih Wei Feng; Chih Chung Yang; Yen Sheng Lin; Kung Jeng Ma; Jen Inn Chyi

doi:10.1002/1521-3951(200111)228:2<357::AID-PSSB357>3.0.CO;2-A

Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser

Yung Chen Cheng, Chi Chih Liao, Shih Wei Feng, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

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Abstract

Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 10¹⁸ cm^-3, a hole concentration of 2.66 × 10¹⁷ cm^-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200111)228:2<357::AID-PSSB357>3.0.CO;2-A
State	Published - Nov 2001

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title = "Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser",

abstract = "Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.",

author = "Cheng, {Yung Chen} and Liao, {Chi Chih} and Feng, {Shih Wei} and Yang, {Chih Chung} and Lin, {Yen Sheng} and Ma, {Kung Jeng} and Chyi, {Jen Inn}",

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T1 - Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser

AU - Cheng, Yung Chen

AU - Liao, Chi Chih

AU - Feng, Shih Wei

AU - Yang, Chih Chung

AU - Lin, Yen Sheng

AU - Ma, Kung Jeng

AU - Chyi, Jen Inn

PY - 2001/11

Y1 - 2001/11

N2 - Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.

AB - Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.

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Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser

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