Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs

Chien Chieh Lee, Liang Wen Wu, Gou Chung Chi

Research output: Contribution to journalConference articlepeer-review

Abstract

A buried p-layer in a GaAs MESFET channel is successfully formed by (Si, Mg) co-implantation and rapid thermal annealing process. The effects of co-implantation dose on the measured electrical activity are investigated; and the results on MESFET implantation profiles are also discussed, when Si and Mg are co-implanted in the semi-insulating (SI) GaAs substrates. These modified profiles are calculated by considering electrical activation and diffusion of both Si and Mg in the SI GaAs. The results are compared with an n-layer measured by the C-V and I-V techniques.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume178
Issue number1-4
DOIs
StatePublished - May 2001
EventMaterials Science with Ion Beams - Strasbourg, France
Duration: 30 May 20002 Jun 2000

Keywords

  • Co-implanted
  • GaAs
  • MESFET
  • Mg
  • Si

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